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MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm * * * High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 430 g (typ.) 2-109C4A Maximum Ratings (Tc = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting 3/4 3/4 Rating 1200 20 200 400 200 400 1310 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque A W C C V Nm 1 2002-10-04 MG200Q2YS65H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Eoff Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon IF = 200 A, VGE = 0 IF = 200 A, VGE = -10 V, di/dt = 700 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 200 A VGE = 15 V, RG = 4.7 W Tc = 125C Inductive load VCC = 600 V, IC = 200 A VGE = 15 V, RG = 4.7 W Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 200 mA, VCE = 5 V IC = 200 A, VGE = 15 V Tc = 25C Tc = 125C Min 3/4 3/4 4.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3.0 3.6 17000 0.05 0.05 0.10 0.55 0.05 0.60 2.4 0.1 3/4 3/4 20 17 Max 500 2.0 7.0 4.0 3/4 3/4 3/4 3/4 3/4 3/4 0.15 3/4 3.5 3/4 0.095 0.21 3/4 mJ 3/4 V ms C/W ms Unit nA mA V V pF VCE = 10 V, VGE = 0, f = 1 MHz Note: Switching time measurement circuit and input/output waveforms RG -VGE IC RG IF VGE 0 90% 10% trr L VCC IC VCE 0 10% td (off) toff tf 10% td (on) ton tr 90% 90% 2 2002-10-04 MG200Q2YS65H IC - VCE (sat) 400 20 V 18 V 15 V 12 V 400 IC - VCE (sat) 20 V 12 V 18 V 10 V 15 V (A) 300 (A) Collector current IC 10 V 300 Collector current IC 200 PC = 1310 W 200 VGE = 8 V 100 100 VGE = 8 V Common emitter Tc = 25C 2 4 6 8 10 0 0 0 0 Common emitter Tc = 125C 2 4 6 8 10 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) VCE - VGE 16 Common emitter Tc = 25C 16 VCE - VGE Common emitter Tc = 125C (V) VCE 12 VCE Collector-emitter voltage (V) 12 Collector-emitter voltage 8 8 IC = 400 A 4 200 A IC = 400 A 4 200 A 100 A 0 0 4 8 12 16 20 100 A 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 200 Common emitter VCE = 5 V 400 Common cathode VGE = 0 IF - VF (A) 150 (A) Forward current IF Tc = 125C 300 Collector current IC 100 200 Tc = 125C 25C 50 -40C 0 0 100 25C 4 8 12 16 0 0 1 2 3 4 Gate-emitter voltage VGE (V) Forward voltage VF (V) 3 2002-10-04 MG200Q2YS65H Switching time - IC 1 : Tc = 25C : Tc = 125C Common emitter VCC = 600 V VGE = 15 V RG = 4.7 W 1 Switching time - IC toff td (off) (ms) Switching time 0.1 tr td (on) Switching time ton (ms) 0.1 tf Common emitter VCC = 600 V VGE = 15 V RG = 4.7 W : Tc = 25C : Tc = 125C 100 1000 0.01 10 100 1000 0.01 10 Collector current IC (A) Collector current IC (A) Switching time - RG 1 : Tc = 25C : Tc = 125C 10 ton td (on) Switching time - RG Common emitter VCC = 600 V IC = 200 A VGE = 15 V toff (ms) tr (ms) 1 Switching time Switching time 0.1 td (off) 0.1 tf Common emitter VCC = 600 V IC = 200 A VGE = 15 V 0.01 1 10 100 0.01 1 : Tc = 25C : Tc = 125C 10 100 Gate resistance RG (9) Gate resistance RG (9) Switching loss - IC 100 : Tc = 25C : Tc = 125C Eon Eoff 10 Edsw 1000 Switching loss - RG Common emitter VCC = 600 V IC = 200 A VGE = 15 V Eon Eoff (mJ) (mJ) Switching loss 100 Switching loss 1 Common emitter VCC = 600 V VGE = 15 V RG = 4.7 W 100 1000 10 0.1 10 1 1 : Tc = 25C : Tc = 125C 10 Edsw 100 Collector current IC (A) Gate resistance RG (9) 4 2002-10-04 MG200Q2YS65H VCE, VGE - QG 1600 Common emitter RL = 3 W Tc = 25C 1200 VCE = 0 800 600 V 400 V 200 V 400 4 8 12 16 100000 C - VCE (V) (V) VCE Cies Gate-emitter voltage VGE (pF) 10000 Coes Cres 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25C 100 0.01 Collector-emitter voltage 0 0 400 800 1200 1600 2000 Capacitance C 0.1 1 10 100 Charge QG (nC) Collector-emitter voltage VCE (V) Short circuit SOA 6 1000 Reverse bias SOA 5 (x times) (A) Collector current IC 4 3 2 VCC < 900 V = 1 Tj < 125C = tw = 5 ms 0 0 200 400 600 800 1000 1200 1400 100 Collector current 10 1 Tj < 125C = VGE = 15 V RG = 4.7 W 0.1 0 500 1000 1500 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Rth (t) - tw 1 Transient thermal resistance Rth (t) (C/W) Diode stage 0.1 Transistor stage 0.01 Tc = 25C 0.001 0.01 0.001 0.1 1 10 Pulse width tw (s) 5 2002-10-04 MG200Q2YS65H RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-10-04 |
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